Interband cascade LEDs grown on silicon substrates

Chadwick L. Canedy; William W. Bewley; Stephanie Tomasulo; Chul Soo Kim; Charles D. Merritt; Igor Vurgaftman; Jerry R. Meyer; Mijin Kim; Thomas J. Rotter; Ganesh Balakrishnan; Terry D. Golding

doi:10.1117/12.2607369

5 March 2022 Interband cascade LEDs grown on silicon substrates

Chadwick L. Canedy, William W. Bewley, Stephanie Tomasulo, Chul Soo Kim, Charles D. Merritt, Igor Vurgaftman, Jerry R. Meyer, Mijin Kim, Thomas J. Rotter, Ganesh Balakrishnan, Terry D. Golding

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Proceedings Volume PC12006, Silicon Photonics XVII; PC120060B (2022) https://doi.org/10.1117/12.2607369
Event: SPIE OPTO, 2022, San Francisco, California, United States

Abstract

Mid-IR emitters grown on silicon will be simpler to process and less expensive to manufacture than devices grown on GaSb. Here we report interband cascade light emitting devices grown on 4° offcut silicon. While core heating limited cw emission from epi-up devices on GaSb, dissipation via the substrate allowed devices on silicon to operate to much higher currents. Accounting for differences in architecture, the efficiency was approximately 75% of that for the best previous epi-down ICLEDs grown on GaSb. At 100 mA, 200-µm-diameter mesas produced 184 µW cw at T = 25 °C and 140 µW at 85 °C.

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Chadwick L. Canedy, William W. Bewley, Stephanie Tomasulo, Chul Soo Kim, Charles D. Merritt, Igor Vurgaftman, Jerry R. Meyer, Mijin Kim, Thomas J. Rotter, Ganesh Balakrishnan, and Terry D. Golding "Interband cascade LEDs grown on silicon substrates", Proc. SPIE PC12006, Silicon Photonics XVII, PC120060B (5 March 2022); https://doi.org/10.1117/12.2607369

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