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5 March 2022 Maturation of InP- and GaSb-based epitaxial technologies for photonics applications
Amy W. K. Liu, Jeng Shiuh Cheong, Joel M. Fastenau, Matthew Fetters, Phillip Frey, Manori Gunasekera, Michael Kattner, Hubert Krysiak, Dmitri Lubyshev, Mark Mattingley, Scott A. Nelson, Dennis E. Szymanski, Mark J. Furlong
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Proceedings Volume PC12009, Quantum Sensing and Nano Electronics and Photonics XVIII; PC1200916 (2022) https://doi.org/10.1117/12.2622378
Event: SPIE OPTO, 2022, San Francisco, California, United States
Abstract
MBE and MOVPE growths of InP-based extended wavelength and GaSb-based IR emitter and detector structures have progressed to production mode. These photonics device structures are typically grown using large format, multi wafer MBE and MOCVD tools and on large diameter substrates (100 to 150 mm). In this work, material characterization data of advanced InP- and GaSb based epitaxial structures will be shown. Multi point measurements showing cross-wafer and cross-platen uniformity will also be shared. Finally, detailed analysis of run-to-run epiwafer data will be presented to demonstrate the manufacturability of our production epitaxial process for these advanced photonics device structures.
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Amy W. K. Liu, Jeng Shiuh Cheong, Joel M. Fastenau, Matthew Fetters, Phillip Frey, Manori Gunasekera, Michael Kattner, Hubert Krysiak, Dmitri Lubyshev, Mark Mattingley, Scott A. Nelson, Dennis E. Szymanski, and Mark J. Furlong "Maturation of InP- and GaSb-based epitaxial technologies for photonics applications", Proc. SPIE PC12009, Quantum Sensing and Nano Electronics and Photonics XVIII, PC1200916 (5 March 2022); https://doi.org/10.1117/12.2622378
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KEYWORDS
Photonics
Infrared detectors
Manufacturing
Photonic devices
Semiconducting wafers
Metalorganic chemical vapor deposition
Molecular beam epitaxy
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