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9 March 2022 Active region doping strategies in O-band InAs/GaAs quantum-dot lasers
Lydia K. Jarvis, Ben Maglio, Samuel Shutts, Zhibo Li, Huiwen Deng, Mingchu Tang, Huiyun Liu, Peter Smowton
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Proceedings Volume PC12021, Novel In-Plane Semiconductor Lasers XXI; PC1202104 (2022) https://doi.org/10.1117/12.2614632
Event: SPIE OPTO, 2022, San Francisco, California, United States
Abstract
The performance of O-band InAs/GaAs quantum-dot (QD) lasers grown by molecular beam epitaxy with three different doping strategies are investigated in a temperature range 17 °C – 97 °C. We demonstrate lasers with a reduced threshold current using direct n-doping (during the dot formation) in the active region compared lasers with a nominally undoped active region. We explain results using calculations of the dot and wetting layer potentials and the electron and hole energy levels.
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Lydia K. Jarvis, Ben Maglio, Samuel Shutts, Zhibo Li, Huiwen Deng, Mingchu Tang, Huiyun Liu, and Peter Smowton "Active region doping strategies in O-band InAs/GaAs quantum-dot lasers", Proc. SPIE PC12021, Novel In-Plane Semiconductor Lasers XXI, PC1202104 (9 March 2022); https://doi.org/10.1117/12.2614632
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KEYWORDS
Doping
Gallium arsenide
Indium arsenide
Quantum dot lasers
Modulation
Lithium
Luminescence
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