Presentation
13 June 2022 Pattern shape engineering
Shurong Liang, Amol Gupta, Steven Sherman, Kevin Anglin, Keun Hee Bai, Jong Chul Park
Author Affiliations +
Abstract
Patterning cost and complexity continues to rise with every node. Although EUV lithography has extended dimensional scaling, its limitations have required the industry to implement multi-EUV and other complex patterning schemes. Single exposure EUV patterning is limited by stochastic defects at sub-36nm pitch. Also, counter-scaling between pitch and tip-to-tip spacing limits how close patterned features can be packed in the non-preferred direction. Multi-EUV patterning schemes significantly increase cost while also introducing Edge Placement Errors (EPE). We discuss here an innovative pattern shaping capability which can elongate pre-defined line/space and hole patterns to address these challenges. We will discuss various process knobs including reactive chemistry and material selectivity which can be tuned to allow precision pattern shaping. We will also show how this capability can be used for sidewall processing for applications such as asymmetric spacer removal. Directional pattern shaping has the potential to be a powerful tool in the patterning engineer’s toolbox to help further extend Moore’s law.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shurong Liang, Amol Gupta, Steven Sherman, Kevin Anglin, Keun Hee Bai, and Jong Chul Park "Pattern shape engineering", Proc. SPIE PC12056, Advanced Etch Technology and Process Integration for Nanopatterning XI, PC1205602 (13 June 2022); https://doi.org/10.1117/12.2615043
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KEYWORDS
Optical lithography

Extreme ultraviolet lithography

Chemistry

Stochastic processes

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