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Acqubit has been developing GaInP GmAPD photon counting arrays using a back-side illuminated homojunction InGaP mesa design. Both single element and 32 x 32 arrays GaInP GmAPDs have been designed, fabricated, and tested. We observed low dark current density of 0.32 uA/cm2 before breakdown and a dark count rate of ~ 10 kHz at 3.5 V overbias at room temperature for a 50-micron device. Furthermore, we obtained a quantum efficiency (QE) of about 55% at 520 nm without a bottom reflector. The combination of mesa structure and removal of the substrate greatly suppresses pixel crosstalk while maintaining a high QE and photon detection efficiency (PDE). We have built focal plane arrays using 32x32 GaInP arrays integrated with read-out integrated circuits (ROICs). Furthermore, we removed the GaAs substrate for backside illumination and demonstrated good QE. We integrated SiO2 micro lens arrays for improved optical fill factor.
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