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4 October 2022 Dissipationless circulating currents and fringe magnetic fields near a single spin embedded in a two-dimensional electron gas (Conference Presentation)
Adonai Rodrigues da Cruz, Michael E. Flatté
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Proceedings Volume PC12205, Spintronics XV; PC122051I (2022) https://doi.org/10.1117/12.2635112
Event: SPIE Nanoscience + Engineering, 2022, San Diego, California, United States
Abstract
The combination of spin-orbit coupling with broken spatial inversion symmetry in semiconductors (e.g. zinc-blende quantum-wells and surfaces) and localized spin states originated from a single magnetic defect is a promising system to realize future semiconductor spintronics devices [1]. We present a theory of dissipationless circulating current induced by a magnetic defect in a two-dimensional electron gas with both Bychkov-Rashba and Dresselhaus spin-orbit coupling [1]. The shape and spatial extent of these dissipationless circulating currents depend dramatically on the relative strengths of spin-orbit fields with differing spatial symmetry, offering the potential to use an electric gate to manipulate nanoscale magnetic fields and couple magnetic defects. The spatial structure of the fringing magnetic field emerging from the current is calculated and provides a direct way to measure the spin-orbit fields of the host, as well as the defect spin orientation, through scanning nanoscale magnetometry [3]. [1] Wolfowicz, G., Heremans, F.J., Anderson, C.P. et al. Nat RevMater 6, 906–925 (2021). [2] Da Cruz, A.R. and Flatté, M. E., arXiv:2111.06770 [3] Casola, F. and van der Sar, T. and Yacoby, A. Nature Reviews Materials, 3 (1), 17088 (2018).
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Adonai Rodrigues da Cruz and Michael E. Flatté "Dissipationless circulating currents and fringe magnetic fields near a single spin embedded in a two-dimensional electron gas (Conference Presentation)", Proc. SPIE PC12205, Spintronics XV, PC122051I (4 October 2022); https://doi.org/10.1117/12.2635112
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KEYWORDS
Magnetism
Magnetic semiconductors
Semiconductors
Augmented reality
Spintronics
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