Material and device characterization of monolithic two-color short-wavelength InGaAs infrared photodetectors (Conference Presentation)

Suho Park; Jiyeon Jeon; Byoung Sun Chun; Yeongho Kim; Sang Jun Lee

doi:10.1117/12.2632211

11 October 2022 Material and device characterization of monolithic two-color short-wavelength InGaAs infrared photodetectors (Conference Presentation)

Suho Park, Jiyeon Jeon, Byoung Sun Chun, Yeongho Kim, Sang Jun Lee

Author Affiliations +

Proceedings Volume PC12234, Infrared Sensors, Devices, and Applications XII; PC122340C (2022) https://doi.org/10.1117/12.2632211
Event: SPIE Optical Engineering + Applications, 2022, San Diego, California, United States

Abstract

Two-color photovoltaic InGaAs infrared (IR) photodetectors with cutoff wavelengths of λc = 1.7 μm and 2.6 μm were monolithically grown on a single substrate by metal-organic chemical vapor deposition. The IR detectors have a back-to-back diode structure with In0.53Ga0.47As (Eg = 0.735 eV) and In0.83Ga0.17As (Eg = 0.488 eV) absorbers with a large lattice-mismatch of ~2%, using step-graded metamorphic InAsxP1-x buffers. The surface roughness and crystal quality of the metamorphic InAsP buffers were investigated by atomic force microscopy and X-ray diffractometry. The InAs0.63P0.37 topmost buffer achieved a low rms surface roughness of 2.8 nm and a sufficient strain relaxation of 97%. Photodetector devices were fabricated with a two-terminal configuration, providing a bias-dependent two-color detection in the short-wavelength IR (SWIR) spectral region (1–3 μm). The dark current densities of the In0.53Ga0.47As diode (blue channel) and In0.83Ga0.17As diode (red channel) were saturated at 1.8×10-8 and 1.1×10-4 A/cm2 at 300 K, respectively. The larger saturated current density in the red channel is due to higher Shockley-Read-Hall recombination and higher intrinsic carrier concentration. The two-color InGaAs detector showed high room-temperature specific detectivities of 4.1×1011 and 3.1×109 cm·Hz1/2/W for the blue (In0.53Ga0.47As) and red (In0.83Ga0.17As) channels, respectively. Our two-terminal InGaAs detector with SWIR two-color detection capability can be easily integrated in commercial two-terminal readout integrated circuits, leading to the realization of high-performance uncooled two-color IR imagers.

Conference Presentation

Citation Download Citation

Suho Park, Jiyeon Jeon, Byoung Sun Chun, Yeongho Kim, and Sang Jun Lee "Material and device characterization of monolithic two-color short-wavelength InGaAs infrared photodetectors (Conference Presentation)", Proc. SPIE PC12234, Infrared Sensors, Devices, and Applications XII, PC122340C (11 October 2022); https://doi.org/10.1117/12.2632211

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KEYWORDS

Indium gallium arsenide

Short wave infrared radiation

Photodetectors

Infrared photography

Infrared radiation

Diodes

Sensors

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