Recently, oxide semiconductors have attracted tremendous attention due to their applications in various fields from UV emitters, power electronics, nano-sensors and optoelectronics. Furthermore, global warming forces new solutions to limit greenhouse gas emissions and mitigate the negative effects of climate change. By performing thermodynamic calculations based on free-Gibbs energy and equilibrium constants of seven theoretical reactions for two oxides systems ZnO and Ga2O3, we confirm that such semiconductors could be grown by decomposition of carbon dioxide. In addition, we present a modified carbothermal method of growing ZnO nanowires. Nanowires obtained by us display excellent structural and optical properties with FWHM of photoluminescence at T = 8 K from donor bound exciton equal to 0.5 meV. We strongly believe that our modified carbothermal method is an analog of the growth process of large ZnO bulk crystals, which occurred previously in the Olawa foundry in Poland.
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