We demonstrate a hybrid GaSb/Si3N4 Vernier laser in an edge-coupled configuration emitting around 2.55 µm, consisting of a GaSb-based reflective semiconductor amplifier, and a reflective Si3N4 circuit, consisting of two resistively tunable ring resonators in a loop mirror towards Vernier type operation. The hybrid laser exhibited a threshold current of 190 mA, and a maximum output power of 6.4 mW around 325 mA injection current. Moreover, the hybrid laser showed a broad tuning range of 170 nm, with an access to wavelengths from 2474 nm to 2644 nm, and a > 1 mW output power across the whole tuning band.
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