III-V semiconductor plasmonics for gas sensing of organophosphorous compounds

Pierre Fehlen; Guillaume Thomas; Fernando Gonzalez Posada; Julien Guise; Francesco Rusconi; Laurent Cerutti; Thierry Taliercio; Denis Spitzer

doi:10.1117/12.2649983

17 March 2023 III-V semiconductor plasmonics for gas sensing of organophosphorous compounds

Pierre Fehlen, Guillaume Thomas, Fernando Gonzalez Posada, Julien Guise, Francesco Rusconi, Laurent Cerutti, Thierry Taliercio, Denis Spitzer

Author Affiliations +

Proceedings Volume PC12430, Quantum Sensing and Nano Electronics and Photonics XIX; PC1243017 (2023) https://doi.org/10.1117/12.2649983
Event: SPIE OPTO, 2023, San Francisco, California, United States

Abstract

Organophosphorous compounds, e.g., sarin, are known for their harmful effects towards human. We propose a rapid chemistry-free III-V semiconductors InAsSb plasmonic transducer working in the mid-infrared with ribbon-shaped nano-antennas associated with a confined enhanced electric field at the nanoscale. Exploiting Salisbury perfect absorber structure coupled to an epsilon-near-zero layer benefit both spectral and spatial overlap for efficient surface-enhanced infrared spectroscopy (SEIRA). A detection signal close to 5% was obtained allowing us to estimate that a 5 Å thick monolayer of the sarin simulant DMMP has bound to the sensor native oxide. FDTD and RCWA simulations confirmed experimental results.

Conference Presentation

Citation Download Citation

Pierre Fehlen, Guillaume Thomas, Fernando Gonzalez Posada, Julien Guise, Francesco Rusconi, Laurent Cerutti, Thierry Taliercio, and Denis Spitzer "III-V semiconductor plasmonics for gas sensing of organophosphorous compounds", Proc. SPIE PC12430, Quantum Sensing and Nano Electronics and Photonics XIX, PC1243017 (17 March 2023); https://doi.org/10.1117/12.2649983

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