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30 April 2023 To enhance EPE through PSD based quantification analysis of resist impact and lightsource induced LWR/LER
Toshihiro Oga, Takamitsu Komaki, Takeshi Ohta, Shinichi Matsumoto, Takashi Saitou, Tomohiro Iwaki, Kanji Sugino, Katsunori Otsuki
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Proceedings Volume PC12494, Optical and EUV Nanolithography XXXVI; PC124940C (2023) https://doi.org/10.1117/12.2658142
Event: SPIE Advanced Lithography + Patterning, 2023, San Jose, California, United States
Abstract
The Edge-placement-error requirements keep progressively scaling down in immersion lithography process in conjunction with Immersion lightsource technology. We studied quantification analysis of impact on resist LWR/ LER to the speckle dependency by; a. LWR/LER by analyzing the Power Spectral Density (PSD) curves. b. key frequency components by the photo resist and/ or the speckle contrast such based on PSD tendency by # of pulse use during exposure c. further speckle contrast reduction for LWR/ LER enhancement by 4X extension of Pulse duration.
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Toshihiro Oga, Takamitsu Komaki, Takeshi Ohta, Shinichi Matsumoto, Takashi Saitou, Tomohiro Iwaki, Kanji Sugino, and Katsunori Otsuki "To enhance EPE through PSD based quantification analysis of resist impact and lightsource induced LWR/LER", Proc. SPIE PC12494, Optical and EUV Nanolithography XXXVI, PC124940C (30 April 2023); https://doi.org/10.1117/12.2658142
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KEYWORDS
Line edge roughness
Semiconductors
Line width roughness
Lithography
Artificial intelligence
Error analysis
Immersion lithography
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