We will discuss how to realize QDs based on the well-developed GaAs-platform capable of emitting in the telecom O- and C-bands [1]. Advanced nanofabrication techniques for the realization of optical resonators utilized to greatly enhance the source brightness will be discussed [2,3]. In(Ga)As QDs operating in the telecom C-band and integrated into circular Bragg grating cavities will be shown. The Purcell-enhanced sources reached a fibre-coupled single-photon count rate of 13.9 MHz (excitation rep. rate: 228 MHz, first-lens collection efficiency ~17%), with a multi-photon contribution as low as g(2)(0) = 0.0052. Operation at elevated temperature will be demonstrated [4].
[1] S. L. Portalupi, et al. Sci. Technol. 34, 053001 (2019).
[2] M. Sartison, et al., Appl. Phys. Lett. 113, 032103 (2018).
[3] S. Kolatschek, et al., Nano Lett. 21, 7740 (2021).
[4] C. Nawrath et al., arXiv:2207.12898 (2022).
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