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Organic infrared photodetectors with improved detectivity would enable low-cost spectroscopic analysis and other imaging applications. However, organic infrared materials are challenged by inefficient transduction due to increasing recombination with lower bandgaps. Here we report the approach of phototransistor structures to increase signal gain for materials responsive from 1100 to 1800 nm with a peak absorption of 1550 nm. The device is consisted of a bilayer transistor channel that decouples charge photogeneration and transport, enabling charge injection for signal gain. The frequency and light dependence of the phototransistor characteristics are analyzed to understand the change in photoconductive gain under different working conditions. Lastly, we will also compare the phototransistor performance to a metal-insulator-semiconductor capacitive detector, to evaluate the potentials and tradeoff for these alternative structures for infrared detection.
Tse Nga Ng
"Organic phototransistors and capacitive sensors for infrared detection", Proc. SPIE PC12662, Organic and Hybrid Transistors XXII, PC126620O (29 September 2023); https://doi.org/10.1117/12.2676581
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Tse Nga Ng, "Organic phototransistors and capacitive sensors for infrared detection," Proc. SPIE PC12662, Organic and Hybrid Transistors XXII, PC126620O (29 September 2023); https://doi.org/10.1117/12.2676581