Poster
22 November 2023 Holistic litho-etch approach towards high NA EUV challenges
Author Affiliations +
Conference Poster
Abstract
Extreme ultraviolet (EUV) lithography has already introduced in high volume manufacturing and continuous improvements has allowed to resolve pitch 24 nm line and space (L/S), pitch 32 nm contact hole and pillar pattern with single exposure at even numerical aperture (NA) 0.33. However, pattern roughness, local critical dimension uniformity (LCDU) and process related defects are still major challenges with decreasing critical dimensions (CD). Pitch downscaling also require the use of thinner photoresist mask to prevent pattern collapse from high aspect ratios. Thinner photoresist mask is challenging for pattern transfer because the resist “etch budget” is becoming too small to prevent pattern break during plasma etch transfer. It is required to investigate a co-optimization of lithography processes, underlayers and etch processes to further EUV patterning extension. In this paper our latest developed technology and process solutions to extend the limits of EUV patterning will be report.
(2023) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Soichiro Okada, Arnaud Dauendorffer, Yuhei Kuwahara, Satoru Shimura, Philippe Foubert, Danilo De Simone, Cong Que Dinh, Ken Ando, Atsushi Tsuboi, Nobuyuki Fukui, Arame Thiam, Yannick Feurprier, and Kathleen Nafus "Holistic litho-etch approach towards high NA EUV challenges", Proc. SPIE PC12750, International Conference on Extreme Ultraviolet Lithography 2023, PC1275011 (22 November 2023); https://doi.org/10.1117/12.2687568
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Extreme ultraviolet

Etching

Critical dimension metrology

Optical lithography

Photoresist materials

Plasma etching

High volume manufacturing

Back to Top