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13 March 2024 Improvements in high purity seeded growth of BaGa4S7 and BaGa4Se7
Jani Jesenovec, Kevin T. Zawilski, Peter G. Schunemann
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Proceedings Volume PC12869, Nonlinear Frequency Generation and Conversion: Materials and Devices XXIII; PC128690H (2024) https://doi.org/10.1117/12.3010825
Event: SPIE LASE, 2024, San Francisco, California, United States
Abstract
BaGa4S7 (BGS) and BaGa4Se7 (BGSe) are attractive new nonlinear optical (NLO) crystals notable for the rare combination of wide band gaps (3.54 eV and 2.64 eV), long phonon cut-off wavelengths (13.7 m and 18 m), and relative ease of growth from stoichiometric melts, making them ideal for shifting widely-available 1-micron laser sources deep into the mid-IR. Here we demonstrate high purity HGF growth along desired phase-matching directions for simplified fabrication and maximum yield of oriented frequency conversion devices, allowing apertures up to 15x25 mm2 and lengths greater than 20 mm, as well as compare seeded vs. unseeded growth.
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Jani Jesenovec, Kevin T. Zawilski, and Peter G. Schunemann "Improvements in high purity seeded growth of BaGa4S7 and BaGa4Se7", Proc. SPIE PC12869, Nonlinear Frequency Generation and Conversion: Materials and Devices XXIII, PC128690H (13 March 2024); https://doi.org/10.1117/12.3010825
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KEYWORDS
Crystals
Barium
Nonlinear crystals
Oxides
Light absorption
Oxygen
Phonons
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