Presentation
13 March 2024 Characterization of MOVPE grown InGaAs/GaAs semiconductor quantum dots as gain medium in edge emitting lasers
Author Affiliations +
Abstract
Semiconductor quantum dots (QDs) offer various unique properties that make them interesting candidates for the use as gain media in semiconductor laser diodes. MOVPE is used as the method of growth for the QD structures with high area density and vertically stacked QD layers. This leads to a broad gain spectrum, which enables laser devices with wide tuning ranges around 1300nm. We incorporate this active region into edge-emitting laser structures, for the characterization of optical gain and absorption properties, as well as the inner losses.
Conference Presentation
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Philipp Noack, Nathalie Benzler, Sergej Vollmer, Michael Jetter, and Peter Michler "Characterization of MOVPE grown InGaAs/GaAs semiconductor quantum dots as gain medium in edge emitting lasers", Proc. SPIE PC12905, Novel In-Plane Semiconductor Lasers XXIII, PC129050F (13 March 2024); https://doi.org/10.1117/12.3001593
Advertisement
Advertisement
KEYWORDS
Semiconductor lasers

Semiconductor quantum dots

Materials properties

Gallium arsenide

Indium gallium arsenide

Quantum confinement

Quantum wells

Back to Top