Recently, solid-state magnetometers have stimulated interest due to their smaller size, weight, and power compared to existing magnetometers, and their potential to self-calibrate; two features which improve the efficiency of any device carrying a magnetometer. In this work we simulate room-temperature ODMR of the negatively charged silicon vacancy VSi– in 6H-SiC, an emerging candidate for quantum magnetometry, using Lindblad master equations and density matrix populations and compare with experimental results. Furthermore, we simulate ODMR of VSi– V(2) site in isotopically-purified 6H-SiC, and predict superior sensitivity as compared with ODMR of samples with naturally-occuring magnetic nuclei.
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