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The design, fabrication and characterisation of a silicon nitride optical phased array (OPA) for waveguide integration with flip-chip bonded rubidium (Rb) atomic MEMS vapour cells are demonstrated. A one-dimensional OPA with a symmetric splitter tree design at 780 nm wavelength is fabricated by electron-beam lithography and plasma dry-etching. The waveguides were cladded with silicon dioxide before bonding to an Rb MEMS vapour cell. The characterisation was performed by end-fire coupling a 780.24 nm laser to the waveguide by a lens fibre. A saturated absorption spectroscopy measurement revealed the ~ 6 MHz hyperfine transition absorption dips that can be utilised for laser frequency stabilisation for atomic cooling.
Kevin Gallacher,Eugenio Gaetano,Jeremi Januszewicz,Sean Dyer,James McGilligan,Paul Griffin,Erling Riis,Marc Sorel, andDouglas Paul
"Silicon nitride optical phased array for waveguide integration of atomic vapour MEMS cells", Proc. SPIE PC12912, Quantum Sensing, Imaging, and Precision Metrology II, PC129123H (13 March 2024); https://doi.org/10.1117/12.3001475
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Kevin Gallacher, Eugenio Gaetano, Jeremi Januszewicz, Sean Dyer, James McGilligan, Paul Griffin, Erling Riis, Marc Sorel, Douglas Paul, "Silicon nitride optical phased array for waveguide integration of atomic vapour MEMS cells," Proc. SPIE PC12912, Quantum Sensing, Imaging, and Precision Metrology II, PC129123H (13 March 2024); https://doi.org/10.1117/12.3001475