Presentation
11 June 2024 Direct band-gap hexagonal Silicon-Germanium type-I quantum wells
R. Farina, V. T. van Lange, W. H. J. Peeters, Max C. van Hemert, M. M. Jansen, C. Wakelkamp, Erik P. A. M. Bakkers, Jos E. M. Haverkort
Author Affiliations +
Abstract
Hexagonal SiGe alloys offer a group IV direct bandgap for integrated photonics, addressing the limitations of traditional silicon-based electronics. We have synthesized coaxial nanowire shells comprising direct bandgap hex-Ge/SiGe and hex-SiGe/SiGe Quantum Wells (QWs) around a wurtzite GaAs core. Time-resolved photoluminescence measurements demonstrate a 1 nanosecond radiative lifetime, proving direct bandgap emission. Photoluminescence spectra show the QW emission in between the emission of the well and the barrier material, indicating type-I band alignment. Measurements as a function of QW thickness demonstrate clear quantum confinement with emission up to room temperature for thick QWs. By changing the QW-thickness and the well composition, the emission could be tuned between 2000-3400 nm. The experimentally observed direct bandgap SiGe QWs with type-I band alignment are expected to be pivotal for the development of novel low-dimensional devices based on hex-Ge and hex SiGe.
Conference Presentation
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. Farina, V. T. van Lange, W. H. J. Peeters, Max C. van Hemert, M. M. Jansen, C. Wakelkamp, Erik P. A. M. Bakkers, and Jos E. M. Haverkort "Direct band-gap hexagonal Silicon-Germanium type-I quantum wells", Proc. SPIE PC12991, Nanophotonics X, PC1299114 (11 June 2024); https://doi.org/10.1117/12.3016717
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KEYWORDS
Quantum wells

Silicon

Alloys

Germanium

Photoluminescence

Quantum features

Quantum light sources

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