Dry resist deposition and development technology is being adopted to break the tradeoffs among resolution, sensitivity, roughness, and defect performance to enable HVM for high NA EUV. Dry resist patterning performance at 0.33 NA EUV for pitch 24 nm dense line-space will be presented showing the readiness towards the high NA EUV patterning. By co-optimizing process parameters such as underlayer type, post exposure bake strategy, and dry development chemistry, dose to roughness and defectivity trade off can be overcome, leading to better roughness and defectivity without a compromise in dose. We examine small and large area defectivity post litho and post pattern transfer using CDSEM and broad band plasma (BBP) defectivity bright field inspection techniques to understand the effect of process parameters on bridge and break defects. Additionally, we explore how scaling underlayer thickness and stack configuration impacts the final pattern quality. Overall, this study emphasizes the importance of co-optimizing the process parameters to achieve the best results in dry resist patterning, especially as feature sizes shrink.
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