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13 November 2024 Modeling spatial statistics of photoresist films
William D. Hinsberg, Frances A. Houle
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Proceedings Volume PC13215, International Conference on Extreme Ultraviolet Lithography 2024; PC132150K (2024) https://doi.org/10.1117/12.3034702
Event: SPIE Photomask Technology + EUV Lithography, 2024, Monterey, California, United States
Abstract
Photoresist stochastic effects are the result of nano-scale compositional variations stemming from statistical effects in both the process (e.g. photon shot-noise statistics) and the innate film structure. Several approaches to improve materials homogeneity have been pursued, for example the use of narrow molecular weight distributions, polymer-bound PAG and quencher, and more recently the preparation of photoresist polymers with uniform lengths and controlled sequences using solid-phase synthetic methods. We describe here a computational methodology to characterize how these approaches affect the film’s internal compositional uniformity. We use a coarse-grained three-dimensional spatial model to characterize how the spatial statistics of photoresist films are affected by polymer molecular weight, polydispersity, controlled and random sequence, polymer-bound photoacid generator/quencher and component aggregation. We examine how EUV exposure and deprotection impact the spatial statistics and discuss the connection between film structure and photoresist stochastic effects.
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William D. Hinsberg and Frances A. Houle "Modeling spatial statistics of photoresist films", Proc. SPIE PC13215, International Conference on Extreme Ultraviolet Lithography 2024, PC132150K (13 November 2024); https://doi.org/10.1117/12.3034702
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KEYWORDS
Photoresist materials
Polymers
Polymer thin films
Modeling
Solubility
3D modeling
Chemical composition
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