Presentation
13 November 2024 A SHARP look at mask-side hyper-NA EUV imaging
Author Affiliations +
Abstract
Hyper-NA EUV lithography poses new challenges. The extended chief ray angle and angular range on the photomask amplify mask-3D effects and the extended numerical aperture greatly reduces depth of focus. Pitch-dependent focus shifts further strain the focus budget. There is a critical need for EUV instrumentation to support research and development towards Hyper-NA. SHARP is a synchrotron-based EUV mask microscope. SHARP emulates the mask-side numerical aperture and illumination settings of current and future EUVL scanners. We have implemented mask-side Hyper-NA imaging on SHARP to experimentally study mask 3D-effects, best-focus shift, depth-of-focus and process window at Hyper-NA for different mask architectures. The newly added zoneplate lenses have mask-side numerical apertures of 0.75 4x/8xNA at 6.7º chief-ray angle and 0.85 4x/8xNA at 7.4º chief-ray angle. We characterize the imaging performance of the instrument and present image data, comparing imaging at 0.33 4xNA, High-NA imaging and hyper-NA imaging.
Conference Presentation
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Markus Benk, Ryan Miyakawa, Weilun Chao, and Bruno La Fontaine "A SHARP look at mask-side hyper-NA EUV imaging", Proc. SPIE PC13215, International Conference on Extreme Ultraviolet Lithography 2024, PC132150L (13 November 2024); https://doi.org/10.1117/12.3034709
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KEYWORDS
Extreme ultraviolet lithography

Image sharpness

Extreme ultraviolet

Coating

Multilayers

Photomasks

Refractive index

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