The science and technology of lithography, especially advanced semiconductor
lithography, have now reached such an advanced stage of development
and promise such numerous applications (as evidenced by the numerous
technologies that the field is now enabling--from electronics to photonics,
catalysis to medicine, energy transduction and storage to sensing) that there is
a need for a single, reasonably complete, unified exposition of the molecular
theory that underlies lithographic imaging. This book is intended to
fill this need. It attempts to systematically explain with physical-chemical
theories the molecular-level interactions that underlie the essential aspects of
lithographic imaging phenomena. The effects of such molecular-level interactions become all
the more heightened in the regime of single-digit to a few tens of nanometer-patterned
feature length scales, a regime that overlaps the radius of gyration
of the resist polymers used in the patterning. In addition, the book will
provide the theoretical basis for the main unit operations of the advanced
lithographic process, as well as for advanced lithographic imaging mechanisms,
including photochemical and radiochemical, imprint, and directed self-assembly
imaging mechanisms.
The book is intended for students and professionals whose knowledge of
lithography extends to the chemistry and physics underlying its various unit
operations, and the imaging mechanisms of its various forms. The methods of
physical chemistry are used as far as possible; therefore, a certain familiarity
with chemical kinetics, thermodynamics, statistical mechanics, and quantum
mechanics will be helpful, as will be familiarity with elementary concepts in
physics such as energy, force, electrostatics, electrodynamics, and optics. For
the rest, the book has also been written to be of service to readers who are not
studying the above-named subjects; to this end an
effort has been made to be particularly complete with bibliographic references
in the text.
I am particularly grateful to Dr. Chris Mack, Editor of the Journal of
Micro/Nanolithography, MEMS and MOEMS, who read and commented
on the entire manuscript and provided numerous suggestions for improvement.
I am also grateful to Dr. Manuel Thesen of micro resist technology GmbH, who read parts of the manuscript and provided suggestions for
improvement.
I would also express my sincere appreciation to the editorial staff of SPIE
Press, especially Dara Burrows and Tim Lamkins, who oversaw the
production and publication of the book.
Uzodinma Okoroanyanwu
November 2015