28 March 2013 Improving thin-film zinc-oxide surface acoustic wave device insertion loss using a grooved reflective grating structure
I-Yu Huang, Chang-Yu Lin, Je-Wei Lan
Author Affiliations +
Funded by: National Science Council, National Science Council and National Sun Yat-sen University of the Republic of China, Taiwan,, National Science Council and National Sun Yat-sen University of the Republic of China, Taiwan, National Sun Yat-sen University
Abstract
A novel silicon groove reflective grating structure (RGS) to reduce effectively the insertion loss of a high C-axis (002) thin-film zinc oxide (ZnO) surface acoustic wave (SAW) device is proposed. The insertion loss (S 21 parameter) of three types of SAW devices was investigated and compared; one type had no RGS design, and the other two types had either a conventional metal electrode RGS or a novel etched silicon groove RGS. The wave propagation modes, the harmonic response, and the displacement amplitude profile of the proposed SAW devices were simulated by finite element analysis software (ANSYS). The implemented basic SAW device consists of a sputter-deposited high-quality ZnO thin film on the surface of a Si/SiO 2 /Si 3N4 /Cr/Au substrate. The insertion loss of the proposed SAW device with silicon groove RGS can be reduced to −19.49  dB , which is much smaller than the insertion losses of the SAW devices with a metal electrode-type RGS (−33.15  dB ) and without an RGS (−47.9  dB ). The resonant frequencies of the SAW devices studied (47.37 to 48.05 MHz) are in close agreement with the simulated results (46.8 to 47.55 MHz).
© 2013 Society of Photo-Optical Instrumentation Engineers (SPIE) 0091-3286/2013/$25.00 © 2013 SPIE
I-Yu Huang, Chang-Yu Lin, and Je-Wei Lan "Improving thin-film zinc-oxide surface acoustic wave device insertion loss using a grooved reflective grating structure," Journal of Micro/Nanolithography, MEMS, and MOEMS 12(1), 013019 (28 March 2013). https://doi.org/10.1117/1.JMM.12.1.013019
Published: 28 March 2013
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Cited by 4 scholarly publications.
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KEYWORDS
Roentgenium

Zinc oxide

Thin films

Thin film devices

Silicon

Acoustics

Silicon films

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