Line edge roughness frequency analysis during pattern transfer in semiconductor fabrication

Lei Sun; Wenhui Wang; Genevieve Beique; Min G. Sung; Obert R. Wood II; Ryoung-Han Kim

doi:10.1117/1.JMM.14.3.033501

13 July 2015 Line edge roughness frequency analysis during pattern transfer in semiconductor fabrication

Lei Sun, Wenhui Wang, Genevieve Beique, Min G. Sung, Obert R. Wood II, Ryoung-Han Kim

Author Affiliations +

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 14, Issue 3, 033501 (July 2015). https://doi.org/10.1117/1.JMM.14.3.033501

Abstract

Line edge roughness (LER) and line width roughness (LWR) are analyzed based on the frequency domain 3σ LER characterization methodology during pattern transfer in a self-aligned double patterning (SADP) process. The power spectrum of the LER/LWR is divided into three regions: low frequency, middle frequency, and high frequency regions. Three standard deviation numbers are used to characterize the LER/LWR in the three frequency regions. Pattern wiggling is also detected quantitatively during LER/LWR transfer in the SADP process.

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Lei Sun, Wenhui Wang, Genevieve Beique, Min G. Sung, Obert R. Wood II, and Ryoung-Han Kim "Line edge roughness frequency analysis during pattern transfer in semiconductor fabrication," Journal of Micro/Nanolithography, MEMS, and MOEMS 14(3), 033501 (13 July 2015). https://doi.org/10.1117/1.JMM.14.3.033501

Published: 13 July 2015

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