Achromatic Talbot lithography with partially coherent extreme ultraviolet radiation: process window analysis

Sascha Brose; Jenny Tempeler; Serhiy Danylyuk; Peter Loosen; Larissa Juschkin

doi:10.1117/1.JMM.15.4.043502

17 October 2016 Achromatic Talbot lithography with partially coherent extreme ultraviolet radiation: process window analysis

Sascha Brose, Jenny Tempeler, Serhiy Danylyuk, Peter Loosen, Larissa Juschkin

Author Affiliations +

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 15, Issue 4, 043502 (October 2016). https://doi.org/10.1117/1.JMM.15.4.043502

Abstract

The main purpose of this work is the experimental determination of the process window for achromatic Talbot lithography with partially coherent extreme ultraviolet (EUV) radiation. This work has been performed using the EUV laboratory exposure tool. It consists of a discharge produced plasma source with a direct beam path to a phase-shifting transmission mask, avoiding losses due to additional optical components, the photoresist-coated wafer, and a positioning system for each component. Both the source and the mask are optimized for 11-nm wavelength. The process window has been identified by a systematic analysis of several exposure series. The optimization of exposure parameters resulted in 50-nm half-pitch of the wafer features using a transmission mask with a rectangular dot array of 70-nm half-pitch. The depth of field is found to be 20 μm, and it can be extended by spatial filtering. The exposure dose and mask–wafer distance are varied around their optimal values to estimate the process window, using defectivity of the pattern as a control parameter.

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Sascha Brose, Jenny Tempeler, Serhiy Danylyuk, Peter Loosen, and Larissa Juschkin "Achromatic Talbot lithography with partially coherent extreme ultraviolet radiation: process window analysis," Journal of Micro/Nanolithography, MEMS, and MOEMS 15(4), 043502 (17 October 2016). https://doi.org/10.1117/1.JMM.15.4.043502

Published: 17 October 2016

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