Elucidating the patterning mechanism of zirconium-based hybrid photoresists

Vasiliki Kosma; Kazuki Kasahara; Hong Xu; Jérémy Odent; Christopher K. Ober; Emmanuel P. Giannelis

doi:10.1117/1.JMM.16.4.041007

27 September 2017 ^{Elucidating the patterning mechanism of zirconium-based hybrid photoresists}

Vasiliki Kosma, Kazuki Kasahara, Hong Xu, Jérémy Odent, Christopher K. Ober, Emmanuel P. Giannelis

Author Affiliations +

Funded by: JSR Corporation

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 16, Issue 4, 041007 (September 2017). https://doi.org/10.1117/1.JMM.16.4.041007

Abstract

We report a series of studies aimed at shedding more light on the development mechanism of zirconium (Zr)-based extreme-UV hybrid photoresists. In earlier works, our group demonstrated that Zr-based hybrid resists are capable of resolving 30-nm half-pitch features with a very high sensitivity in the range of 1 to 20 mJ/cm², which renders these materials potential candidates in the area of nonchemically amplified inorganic resists. While attractive because of its high sensitivity, Zr-methacrylic acid suffers from scumming problems. In an effort to better understand what controls sensitivity and scumming phenomena, we employed a combination of analytical techniques (electrospray ionization mass spectrometry, x-ray photoelectron spectroscopy, and Fourier transform infrared spectroscopy) to study the patterning mechanism in detail, to be able to optimize the development process and develop systems with optimal features.

Citation Download Citation

Vasiliki Kosma, Kazuki Kasahara, Hong Xu, Jérémy Odent, Christopher K. Ober, and Emmanuel P. Giannelis "^{Elucidating the patterning mechanism of zirconium-based hybrid photoresists," Journal of Micro/Nanolithography, MEMS, and MOEMS 16(4), 041007 (27 September 2017). https://doi.org/10.1117/1.JMM.16.4.041007}

Received: 27 May 2017; Accepted: 31 August 2017; Published: 27 September 2017

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