1 January 2006 Regrowth of self-assembled InAs quantum dots on nanohole and stripe templates
Suwaree Suraprapapich, Songphol Kanjanachuchai, Supachok Thainoi, Somsak Panyakeow
Author Affiliations +
Abstract
Self-assembled InAs quantum dots (QDs) are grown on two types of templates by molecular beam epitaxy (MBE). A nanohole template is prepared by first growing InAs QDs on a GaAs substrate by a standard MBE process, then capping the QDs with a thin lattice-mismatched layer of GaAs. Subsequent annealing of the nanohole template results in a stripe template. We are able to transfer the patterns of self-assembled QDs onto these two types of templates: regrowth on the nanohole template results in uniform QDs situated in the nanoholes, while regrowth on the stripe template results in chains of QDs aligned along the stripes. Our results imply that self-assembled QDs can be grown onto in-situ prepared patterned substrates, with limited degree of randomness.
©(2006) Society of Photo-Optical Instrumentation Engineers (SPIE)
Suwaree Suraprapapich, Songphol Kanjanachuchai, Supachok Thainoi, and Somsak Panyakeow "Regrowth of self-assembled InAs quantum dots on nanohole and stripe templates," Journal of Micro/Nanolithography, MEMS, and MOEMS 5(1), 011008 (1 January 2006). https://doi.org/10.1117/1.2177287
Published: 1 January 2006
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Indium arsenide

Quantum dots

Gallium arsenide

Annealing

Atomic force microscopy

Crystals

Molecular beam epitaxy

Back to Top