High-NA extreme ultraviolet lithography (EUVL) at 0.55 NA provides the resolution for single-exposure patterning of devices at 2-nm technology node and beyond. In a single exposure, the feature sizes in the 4× direction on the high-NA masks are tighter than the minimum dimensions imageable at 0.33 NA. We present a general discussion of the need for actinic inspections and then a detailed description of actinic pattern mask inspection (APMI) and actinic blank inspection (ABI), two critical capabilities for the EUV mask infrastructure. The advantages of actinic inspection are to detect all types of defects on blanks and masks with and without a pellicle. The recently developed APMI capabilities for high-NA EUV mask inspections offer higher resolution, image contrast, and defect sensitivity. The high-NA APMI is significantly upgraded from the platform with optics, EUV light source, and detector. The high-NA APMI has been released in 2023, and we presented the inspection results. Equally important is the ABI capability for high-NA mask blanks. The upgrade from the current platform includes a Schwarzschild objective with higher magnification that enhances defect signals in the dark field and improved optics with better imaging in the bright field for defect review. The new ABI provides not only higher sensitivity to multilayer phase defects but also an improved defect location accuracy, both are required for blank inspection in high-NA EUVL applications.