CONFERENCE PROCEEDINGS
Advanced Search
Home > Journals > J. Nanophoton. > Volume 10 > Issue 1 > Article
Open Access
7 March 2016 Investigation of indium gallium nitride facet-dependent nonpolar growth rates and composition for core–shell light-emitting diodes
Ionut Gîrgel, Paul R. Edwards, Emmanuel Le Boulbar, Pierre-Marie Coulon, Suman Lata Sahonta, Duncan W. E. Allsopp, Robert W. Martin, Colin J. Humphreys, Philip A. Shields
Author Affiliations +
Journal of Nanophotonics, Vol. 10, Issue 1, 016010 (March 2016). https://doi.org/10.1117/1.JNP.10.016010
Abstract
Core–shell indium gallium nitride (InGaN)/gallium nitride (GaN) structures are attractive as light emitters due to the large nonpolar surface of rod-like cores with their longitudinal axis aligned along the c-direction. These facets do not suffer from the quantum-confined Stark effect that limits the thickness of quantum wells and efficiency in conventional light-emitting devices. Understanding InGaN growth on these submicron three-dimensional structures is important to optimize optoelectronic device performance. In this work, the influence of reactor parameters was determined and compared. GaN nanorods (NRs) with both {11-20}a-plane and {10-10}m-plane nonpolar facets were prepared to investigate the impact of metalorganic vapor phase epitaxy reactor parameters on the characteristics of a thick (38 to 85 nm) overgrown InGaN shell. The morphology and optical emission properties of the InGaN layers were investigated by scanning electron microscopy, transmission electron microscopy, and cathodoluminescence hyperspectral imaging. The study reveals that reactor pressure has an important impact on the InN mole fraction on the {10-10}m-plane facets, even at a reduced growth rate. The sample grown at 750°C and 100 mbar had an InN mole fraction of 25% on the {10-10} facets of the NRs.
CC BY: © The Authors. Published by SPIE under a Creative Commons Attribution 4.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.
Citation Download Citation
Ionut Gîrgel, Paul R. Edwards, Emmanuel Le Boulbar, Pierre-Marie Coulon, Suman Lata Sahonta, Duncan W. E. Allsopp, Robert W. Martin, Colin J. Humphreys, and Philip A. Shields "Investigation of indium gallium nitride facet-dependent nonpolar growth rates and composition for core–shell light-emitting diodes," Journal of Nanophotonics 10(1), 016010 (7 March 2016). https://doi.org/10.1117/1.JNP.10.016010
Published: 7 March 2016
JOURNAL ARTICLE
 11 PAGES
DOWNLOAD PAPER SAVE TO MY LIBRARY
GET CITATION
Lens.org Logo
CITATIONS
Cited by 16 scholarly publications.
Advertisement
Advertisement
KEYWORDS
Indium gallium nitride
Gallium nitride
Indium nitride
Indium
Scanning electron microscopy
Crystals
Transmission electron microscopy
RELATED CONTENT
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top