Masafumi Kimata, Masahiko Denda, Naoki Yutani, Shyuhei Iwade, Natsuro Tsubouchi, Michio Daido, Hiroyuki Furukawa, Reikichi Tsunoda, Toshio Kanno
Optical Engineering, Vol. 26, Issue 3, 263209, (March 1987) https://doi.org/10.1117/12.7974052
TOPICS: Infrared cameras, Platinum, Infrared imaging, Infrared radiation, CCD image sensors, Image sensors, Metals, Thin films, Optical resonators, Quantum efficiency
A 256 x 256 element PtSi Schottky-barrier 1R-CCD image sensor has been developed using a minimum design rule of 2 µm and a three-level polysilicon structure. The pixel size and chip size are 37 x 31 µm2 and 10 x 10 mm2, respectively. In spite of the small pixel size, a large fill factor of 25% has been obtained. The responsivity has been improved by use of a thin metal film and an optical cavity structure. The barrier height and quantum efficiency coefficient obtained from the array performance measurement are 0.23 eV and 0.15 eV -1, respectively. The noise equivalent temperature difference of about 0.1 K is obtained with f/1.4 optics and a 16.7 ms stare time. The noise in this case is limited by the shot noise of the detector. An infrared camera was also developed using the 256 x 256 element IR-CCD image sensor.