1 October 1993 Process techniques for improving performance of positive tone silylation
Edward K. Pavelchek, Gary S. Calabrese, John F. Bohland, Bruce W. Dudley, Susan K. Jones, Peter W. Freeman
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Abstract
Two approaches that control the overflow of silylated material that can occur subsequent to surface imaging of acid-hardened resists are introduced. Treatment of the resist surface with a cross-linking agent [bis(dimethylamino)dimethylsilane] prior to silylation can produce a surface layer with the physical integrity to constrain silylated material. Alternatively, the unexposed areas of the resist may be partially removed by development with a basic solution. The surface depressions thus produced allow volume expansion to occur during silylation without causing overflow.
Edward K. Pavelchek, Gary S. Calabrese, John F. Bohland, Bruce W. Dudley, Susan K. Jones, and Peter W. Freeman "Process techniques for improving performance of positive tone silylation," Optical Engineering 32(10), (1 October 1993). https://doi.org/10.1117/12.146858
Published: 1 October 1993
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CITATIONS
Cited by 3 scholarly publications and 1 patent.
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KEYWORDS
Silicon

Semiconducting wafers

Photoresist processing

Scanning electron microscopy

Etching

Reactive ion etching

Deep ultraviolet

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