Photodetection enhancement in two-terminal amorphous silicon-based     devices: an experimental and computer simulation study

Stephen J. Fonash; Jingya Hou; Francisco A. Rubinelli; Murray Bennett; Scott Wiedeman; Liyou Yang; James Newton

doi:10.1117/12.169735

1 June 1994 Photodetection enhancement in two-terminal amorphous silicon-based devices: an experimental and computer simulation study

Stephen J. Fonash, Jingya Hou, Francisco A. Rubinelli, Murray Bennett, Scott Wiedeman, Liyou Yang, James Newton

Author Affiliations +

Optical Engineering, Vol. 33, Issue 6, (June 1994). https://doi.org/10.1117/12.169735

Abstract

Although amorphous silicon (a-Si:H) is very photosensitive and can be doped n and p type, it does not give effective phototransistors because of the extremely poor diffusion lengths. Hence enhanced photodetection in two-terminal a-Si:H devices is of considerable interest. Using the Analysis of Microelectronic and Photonic Structures (AMPS) computer model, we explore enhanced photodetection possibilities in two-terminal a-Si:H structures and show situations where it can occur. These situations, which we then experimentally verify, are of two types: one can yield quantum efficiencies greater than unity and the other can yield gains of 10³. Both of these enhanced photodetection situations occur because of what we term photogating.

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Stephen J. Fonash, Jingya Hou, Francisco A. Rubinelli, Murray Bennett, Scott Wiedeman, Liyou Yang, and James Newton "Photodetection enhancement in two-terminal amorphous silicon-based devices: an experimental and computer simulation study," Optical Engineering 33(6), (1 June 1994). https://doi.org/10.1117/12.169735

Published: 1 June 1994

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