Optical properties of amorphous silicon germanium obtained by low-frequency plasma-enhanced chemical vapor deposition from SiH4+GeF4 and from SiH4+GeH4

Arllene Mariana Perez; Carlos Zuniga; Francisco Renero Carrillo; Alfonso Jacome Torres

doi:10.1117/1.1883698

1 April 2005 Optical properties of amorphous silicon germanium obtained by low-frequency plasma-enhanced chemical vapor deposition from SiH₄+GeF₄ and from SiH₄+GeH₄

Arllene Mariana Perez, Carlos Zuniga, Francisco Renero Carrillo, Alfonso Jacome Torres

Author Affiliations +

Optical Engineering, Vol. 44, Issue 4, 043801 (April 2005). https://doi.org/10.1117/1.1883698

Abstract

Amorphous silicon germanium (a-Si_1–xGe_x) thin films are prepared by low-frequency plasma-enhanced chemical vapor deposition (LF PECVD) on glass substrates, from SiH₄+GeF₄ and SiH₄+GeH₄. These films are deposited under capacitive discharge during 60 min, at a frequency of 110 kHz, substrate temperature of 300°C, pressure of 0.6 Torr, and power of 350 W. The germanium gas mixture composition, determined by X_Ge=[GeF₄]([GeH₄])/[SiH₄]+[GeF₄]([GeH₄]), is varied from 0 to 1. These films are deposited from a (1–X_Ge)SiH₄+(X_Ge)GeF₄(GeH₄) mixture, with H₂ dilution. The refractive index n and absorption coefficient α are determined from transmission spectra. The optical energy gap is also determined. The influence of gas sources on the optical parameters is discussed.

©(2005) Society of Photo-Optical Instrumentation Engineers (SPIE)

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Arllene Mariana Perez, Carlos Zuniga, Francisco Renero Carrillo, and Alfonso Jacome Torres "Optical properties of amorphous silicon germanium obtained by low-frequency plasma-enhanced chemical vapor deposition from SiH₄+GeF₄ and from SiH₄+GeH₄," Optical Engineering 44(4), 043801 (1 April 2005). https://doi.org/10.1117/1.1883698

Published: 1 April 2005

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