1 November 2008 Alignment measurement method for imprint lithography using moiré fringe pattern
Jinyou Shao, Hongzhong Liu, Yucheng Ding, Li Wang, Bingheng Lu
Author Affiliations +
Abstract
A simple and high-accuracy alignment measurement method based on a moiré fringe pattern is proposed. It involves relative rotation positioning and relative linear displacement measurement. Taking full advantage of the magnification effect of moiré fringe in angular and linear displacement, the relative rotation between the template and the wafer is determined first by measuring the inclination of the moiré fringe, and then the relative linear displacement between them is acquired by evaluating the spatial phase shift of two matched moiré fringes. The frequency components in the orthogonal directions of the fringe image obtained by a fast Fourier transform (FFT) and zooming process are used to measure the inclination of the moiré fringe. By selecting different orthogonal directions, a moiré fringe with any inclination can be measured accurately. When gratings are adjusted to parallel, a frequency-domain analysis is also used to extract the spatial phase of fringes at a given frequency. According to the relationship between spatial phase and linear displacement, the misalignment is detected. In experiments, the repeatability for the misalignment measurement has reached 4.8 nm (3).
©(2008) Society of Photo-Optical Instrumentation Engineers (SPIE)
Jinyou Shao, Hongzhong Liu, Yucheng Ding, Li Wang, and Bingheng Lu "Alignment measurement method for imprint lithography using moiré fringe pattern," Optical Engineering 47(11), 113604 (1 November 2008). https://doi.org/10.1117/1.3028350
Published: 1 November 2008
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CITATIONS
Cited by 15 scholarly publications and 1 patent.
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KEYWORDS
Optical alignment

Fringe analysis

Semiconducting wafers

Lithography

Image processing

Error analysis

CCD cameras

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