All-optical diode with photonic multilayers based on asymmetric light localization

Li Jin; Jun Zhou; Mingyang Yang; Chunhua Xue; Miao He

doi:10.1117/1.3558733

1 March 2011 All-optical diode with photonic multilayers based on asymmetric light localization

Li Jin, Jun Zhou, Mingyang Yang, Chunhua Xue, Miao He

Author Affiliations +

Funded by: National Natural Science Foundation of China, The National Natural Science Foundation of China, Natural Science Foundation of Ningbo, International Collaboration Program of Ningbo, International Collaboration Project of Ningbo

Optical Engineering, Vol. 50, Issue 3, 030503 (March 2011). https://doi.org/10.1117/1.3558733

Abstract

An all-optical diode (AOD) with structure (AB)^m(BA)ⁿ(BBAA)^k is proposed based on asymmetric light localization, and its optical bistability are numerically investigated by the nonlinear transfer matrix method. Research results show that the behavior of the AOD strongly depends on the period number m, n, and k, the transmission direction of the AOD is related to the values of m and n, while k affects the transmission contrast of the AOD. It is a significant reference for the design of all-optical signal processing devices.

©(2011) Society of Photo-Optical Instrumentation Engineers (SPIE)

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Li Jin, Jun Zhou, Mingyang Yang, Chunhua Xue, and Miao He "All-optical diode with photonic multilayers based on asymmetric light localization," Optical Engineering 50(3), 030503 (1 March 2011). https://doi.org/10.1117/1.3558733

Published: 1 March 2011

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