Enhanced luminescence property of InGaN/GaN nanorod array light emitting diode

Bingshe Xu; Dan Han; Peizhi Liu; Qingming Liu; Aiqin Zhang; Shufang Ma; Lin Shang

doi:10.1117/1.OE.58.4.045102

23 April 2019 Enhanced luminescence property of InGaN/GaN nanorod array light emitting diode

Bingshe Xu, Dan Han, Peizhi Liu, Qingming Liu, Aiqin Zhang, Shufang Ma, Lin Shang

Author Affiliations +

Funded by: National Natural Science Foundation of China (NSFC), National Natural Science Funds, National Key R&D Program of China, Basic Research Projects of Shanxi Province, Shanxi Provincial Key Innovative Research Team in Science and Technology, Natural Science Foundation of Shanxi Province (Shanxi Province Natural Science Foundation), Program for Science and Technology Development of Shanxi

Optical Engineering, Vol. 58, Issue 4, 045102 (April 2019). https://doi.org/10.1117/1.OE.58.4.045102

Abstract

Three-dimensional (3-D) InGaN/GaN nanorod array light emitting diode (LED) (nanorod-LED) with fine periodicity has been successfully fabricated by the focused ion beam (FIB) etching technique. After FIB etching, the uniformity of nanorod array is 94.3%, manifesting that FIB can control the etch size and etch depth exactly. After KOH etching, nanorod array exhibits comparatively smooth sidewalls. Compared to planar LED, the microphotoluminescence integrated intensity of nanorod-LED is enhanced by 15.7%. Additionally, the finite difference time domain simulations demonstrate that more photons can be extracted by nanorod array and spread to the further region, which is mainly due to the reduction of transform from radiation pattern to modified guided modes.

Citation Download Citation

Bingshe Xu, Dan Han, Peizhi Liu, Qingming Liu, Aiqin Zhang, Shufang Ma, and Lin Shang "Enhanced luminescence property of InGaN/GaN nanorod array light emitting diode," Optical Engineering 58(4), 045102 (23 April 2019). https://doi.org/10.1117/1.OE.58.4.045102

Received: 17 October 2018; Accepted: 4 April 2019; Published: 23 April 2019

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