Open Access
21 July 2021 Silicon avalanche photodiode with photon detection efficiency superior to 0.65 electrons/photon in the wavelength range of 114 to 170 nm
Pavel N. Aruev, Victor P. P. Belik, Vladimir V. Zabrodsky, Andrey V. Nikolaev, Evgeniy V. Sherstnev
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Abstract

We have designed a silicon detector based on an avalanche photodiode for detecting vacuum ultraviolet radiation. It was demonstrated that the detector has a photon detection efficiency superior to 0.65  electrons  /  photon, in the wavelength range from 114 to 170 nm, with an external quantum yield from 49 to 7000  electrons  /  photon at a reverse-bias voltage from 190 to 315 V, respectively. The detector’s active area diameter is 1.5 mm.

CC BY: © The Authors. Published by SPIE under a Creative Commons Attribution 4.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.
Pavel N. Aruev, Victor P. P. Belik, Vladimir V. Zabrodsky, Andrey V. Nikolaev, and Evgeniy V. Sherstnev "Silicon avalanche photodiode with photon detection efficiency superior to 0.65 electrons/photon in the wavelength range of 114 to 170 nm," Optical Engineering 60(7), 077103 (21 July 2021). https://doi.org/10.1117/1.OE.60.7.077103
Received: 4 March 2021; Accepted: 28 June 2021; Published: 21 July 2021
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KEYWORDS
Silicon

Sensors

Photodiodes

Vacuum ultraviolet

Photodetectors

Absorption

Avalanche photodiodes

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