Submicron X-Ray Lithography

R. K. Watts; D. C. Guterman; H. M. Darley

doi:10.1117/12.954840

20 September 1976 Submicron X-Ray Lithography

R. K. Watts, D. C. Guterman, H. M. Darley

Proceedings Volume 0080, Developments in Semiconductor Microlithography; (1976) https://doi.org/10.1117/12.954840
Event: Developments in Semiconductor Microlithography, 1976, San Jose, CA, United States

Abstract

We present results of our evaluation of the X-ray lithographic technique for replication of submicron patterns generated by electron beam. Mylar membranes have largely been employed as substrates for X-ray masks, although silicon substrates have also been used. Absorber patterns with high aspect ratio have been obtained by electroplating and by ion milling. Circuit patterns have been replicated with 0.25μm features in both positive and negative X-ray resists.

Citation Download Citation

R. K. Watts, D. C. Guterman, and H. M. Darley "Submicron X-Ray Lithography", Proc. SPIE 0080, Developments in Semiconductor Microlithography, (20 September 1976); https://doi.org/10.1117/12.954840

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