MBE technology of saturable Bragg reflectors for mode locking of solid state lasers

K. Kosiel; M. Kosmala; K. Regiński; M. Bugajski

doi:10.1117/12.726595

1 February 2007 MBE technology of saturable Bragg reflectors for mode locking of solid state lasers

K. Kosiel, M. Kosmala, K. Regiński, M. Bugajski

Proceedings Volume 6599, Laser Technology VIII: Progress in Lasers; 659904 (2007) https://doi.org/10.1117/12.726595
Event: Laser Technology VIII, 2006, Szczecin, Poland

Abstract

Design and fabrication of saturable Bragg reflectors (SBRs) by molecular beam epitaxy (MBE) is presented. Grown structures consisted of AlAs/GaAs quarter-wave layers with low-temperature InGaAs/GaAs quantum wells (LT QWs) as saturable absorber layers. Special emphasis is put on methodology of wavelength tailoring of distributed Bragg reflectors and on MBE technology of growing the quantum wells with the recombination time of excitons of the order of tens ps. Application of different methods of characterization of LT QWs and SBRs for testing and optimizing the MBE process is discussed.

Citation Download Citation

K. Kosiel, M. Kosmala, K. Regiński, and M. Bugajski "MBE technology of saturable Bragg reflectors for mode locking of solid state lasers", Proc. SPIE 6599, Laser Technology VIII: Progress in Lasers, 659904 (1 February 2007); https://doi.org/10.1117/12.726595

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