MBE back-illuminated silicon Geiger-mode avalanche photodiodes for enhanced ultraviolet response

Daniel R. Schuette; Richard C. Westhoff; Joseph S. Ciampi; Gayatri E. Perlin; Douglas J. Young; Brian F. Aull; Robert K. Reich; David C. Shaver

doi:10.1117/12.887736

12 May 2011 MBE back-illuminated silicon Geiger-mode avalanche photodiodes for enhanced ultraviolet response

Daniel R. Schuette, Richard C. Westhoff, Joseph S. Ciampi, Gayatri E. Perlin, Douglas J. Young, Brian F. Aull, Robert K. Reich, David C. Shaver

Author Affiliations +

Proceedings Volume 8033, Advanced Photon Counting Techniques V; 80330D (2011) https://doi.org/10.1117/12.887736
Event: SPIE Defense, Security, and Sensing, 2011, Orlando, Florida, United States

Abstract

We have demonstrated a wafer-scale back-illumination process for silicon Geiger-mode avalanche photodiode arrays using Molecular Beam Epitaxy (MBE) for backside passivation. Critical to this fabrication process is support of the thin (< 10 μm) detector during the MBE growth by oxide-bonding to a full-thickness silicon wafer. This back-illumination process makes it possible to build low-dark-count-rate single-photon detectors with high quantum efficiency extending to deep ultraviolet wavelengths. This paper reviews our process for fabricating MBE back-illuminated silicon Geigermode avalanche photodiode arrays and presents characterization of initial test devices.

Citation Download Citation

Daniel R. Schuette, Richard C. Westhoff, Joseph S. Ciampi, Gayatri E. Perlin, Douglas J. Young, Brian F. Aull, Robert K. Reich, and David C. Shaver "MBE back-illuminated silicon Geiger-mode avalanche photodiodes for enhanced ultraviolet response", Proc. SPIE 8033, Advanced Photon Counting Techniques V, 80330D (12 May 2011); https://doi.org/10.1117/12.887736

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