Chemical mechanical planarization of amorphous Ge2Sb2Te5 using KClO4 as oxidizer in acidic slurry

Aodong He; Zhitang Song; Bo Liu; Min Zhong; Weili Liu; Liangyong Wang; Weixia Yan; Yu Lei; Guanping Wu

doi:10.1117/12.2015253

24 January 2013 Chemical mechanical planarization of amorphous Ge₂Sb₂Te₅ using KClO₄ as oxidizer in acidic slurry

Aodong He, Zhitang Song, Bo Liu, Min Zhong, Weili Liu, Liangyong Wang, Weixia Yan, Yu Lei, Guanping Wu

Proceedings Volume 8782, 2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage; 87820Y (2013) https://doi.org/10.1117/12.2015253
Event: 2012 International Workshop on Information Data Storage and Ninth International Symposium on Optical Storage, 2012, Shanghai, China

Abstract

Amorphous Ge₂Sb₂Te₅ (a-GST) chemical mechanical planarization (CMP) using KClO4 as the oxidizer in an acidicslurry is investigated in the present work. It is shown that the removal rate (RR ) of the a-GST firstly increases and thentends to saturate when the KClO4 concentration is greater than 0.8 wt%, but the static etch rate (SER) linearly increasesfrom low to high KClO₄ concentration. To understand the oxidation-reaction capability of Ge, Sb and Te, depth profilesof composition of elements and etch morphology of a-GST immersed in the slurry for some time are measured,respectively. It is found that selective corrosion occurs among Ge, Sb and Te, and an accumulation of Te and loss of Gein a-GST surface region are obvious observed, especially at high KClO₄ concentrations. Temperature dependent sheetresistance measurements of all the samples pre- and post-CMP reveal a similar trend, which implies a-GST CMP is ableto keep its characteristic well.

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Aodong He, Zhitang Song, Bo Liu, Min Zhong, Weili Liu, Liangyong Wang, Weixia Yan, Yu Lei, and Guanping Wu "Chemical mechanical planarization of amorphous Ge₂Sb₂Te₅ using KClO₄ as oxidizer in acidic slurry", Proc. SPIE 8782, 2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage, 87820Y (24 January 2013); https://doi.org/10.1117/12.2015253

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KEYWORDS

Chemical mechanical planarization

Germanium

Antimony

Tellurium

Etching

Chemical elements

Polishing

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