Paper
28 May 2013 Transmission line pulse system for avalanche characterization of high power semiconductor devices
Michele Riccio, Giovanni Ascione, Giuseppe De Falco, Luca Maresca, Martina De Laurentis, Andrea Irace, Giovanni Breglio
Author Affiliations +
Proceedings Volume 8764, VLSI Circuits and Systems VI; 87640U (2013) https://doi.org/10.1117/12.2017319
Event: SPIE Microtechnologies, 2013, Grenoble, France
Abstract
Because of the increasing in power density of electronic devices for medium and high power application, reliabilty of these devices is of great interest. Understanding the avalanche behaviour of a power device has become very important in these last years because it gives an indication of the maximum energy ratings which can be seen as an index of the device ruggedness. A good description of this behaviour is given by the static IV blocking characteristc. In order to avoid self heating, very relevant in high power devices, very short pulses of current have to be used, whose value can change from few milliamps up to tens of amps. The most used method to generate short pulses is the TLP (Transmission Line Pulse) test, which is based on charging the equivalent capacitance of a transmission line to high value of voltage and subsequently discharging it onto a load. This circuit let to obtain very short square pulses but it is mostly used for evaluate the ESD capability of semiconductor and, in this environment, it generates pulses of low amplitude which are not high enough to characterize the avalanche behaviour of high power devices . Advanced TLP circuit able to generate high current are usually very expensive and often suffer of distorption of the output pulse. In this article is proposed a simple, low cost circuit, based on a boosted-TLP configuration, which is capable to produce very square pulses of about one hundreds of nanosecond with amplitude up to some tens of amps. A prototype is implemented which can produce pulses up to 20A of amplitude with 200 ns of duration which can characterize power devices up to 1600V of breakdown voltage. Usage of microcontroller based logic make the circuit very flexible. Results of SPICE simulation are provided, together with experimental results. To prove the effectiveness of the circuit, the I-V blocking characteristics of two commercial devices, namely a 600V PowerMOS and a 1200V Trench-IGBT, are measured at different operating temperature.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michele Riccio, Giovanni Ascione, Giuseppe De Falco, Luca Maresca, Martina De Laurentis, Andrea Irace, and Giovanni Breglio "Transmission line pulse system for avalanche characterization of high power semiconductor devices", Proc. SPIE 8764, VLSI Circuits and Systems VI, 87640U (28 May 2013); https://doi.org/10.1117/12.2017319
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KEYWORDS
Switches

Capacitance

Device simulation

Prototyping

Semiconductors

Amplifiers

Manufacturing

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