Microstructure and electrical properties Of PMNT thin films prepared by a modified sol-gel process

Aiyun Liu; Hailong Han; Linlin Wei; Peng Wang; Fangting Lin; Wangzhou Shi; Xiangjian Meng; Jinglan Sun; Junhao Chu; Chengbin Jing

doi:10.1117/12.2053858

16 December 2013 Microstructure and electrical properties Of PMNT thin films prepared by a modified sol-gel process

Aiyun Liu, Hailong Han, Linlin Wei, Peng Wang, Fangting Lin, Wangzhou Shi, Xiangjian Meng, Jinglan Sun, Junhao Chu, Chengbin Jing

Author Affiliations +

Proceedings Volume 9068, Eighth International Conference on Thin Film Physics and Applications; 90680R (2013) https://doi.org/10.1117/12.2053858
Event: Eighth International Conference on Thin Film Physics and Applications (TFPA13), 2013, Shanghai, China

Abstract

0.7Pb(Mg_1/3Nb_2/3)O₃-0.3PbTiO₃ (PMNT) thin films were prepared on (111)Pt/Ti/SiO₂/Si substrate by a modified sol-gel process with Nb₂O₅ as the niobium source. XRD analysis shows that PMNT thin films with pure perovskite were obtained by spin-coating and annealing at 700°C for 20 minutes. The remanent polarization and coercive field of the PMNT thin films are about 7.69μC/cm² and 80.75kV/cm, respectively. The dielectric and C-V curve of PMNT thin films are also investigated. The dielectric constant ( ε_r ) reaches 935 and the dissipation factor (tanδ)is about 0.04 at 1kHz.

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Aiyun Liu, Hailong Han, Linlin Wei, Peng Wang, Fangting Lin, Wangzhou Shi, Xiangjian Meng, Jinglan Sun, Junhao Chu, and Chengbin Jing "Microstructure and electrical properties Of PMNT thin films prepared by a modified sol-gel process", Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 90680R (16 December 2013); https://doi.org/10.1117/12.2053858

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