Paper
16 December 2013 Strains distribution in biaxial Ge/CdSe nanowire analyzed by a new finite element method based on boundary conditions
Dong Wang, Chunrui Wang, Yao Zhang, Shasha Zhang, Xiaofeng Xu, Qinyu Yang
Author Affiliations +
Proceedings Volume 9068, Eighth International Conference on Thin Film Physics and Applications; 906813 (2013) https://doi.org/10.1117/12.2051718
Event: Eighth International Conference on Thin Film Physics and Applications (TFPA13), 2013, Shanghai, China
Abstract
A new finite element method based on boundary conditions is proposed here to obtain the complete strains distribution in Ge/CdSe biaxial nanowires. The results show that the strains in nanowire is essentially uniform along the nanowire axis, whereas turn to be complex in cross-section. Additionally, Raman spectrum of Ge subnanowire was calculated on base of those strain data. Raman frequency shifts in Ge subnanowire in Ge/CdSe biaxial nanowires is a good agreement with that of Raman spectrum, which confirms the validity of this model.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dong Wang, Chunrui Wang, Yao Zhang, Shasha Zhang, Xiaofeng Xu, and Qinyu Yang "Strains distribution in biaxial Ge/CdSe nanowire analyzed by a new finite element method based on boundary conditions", Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 906813 (16 December 2013); https://doi.org/10.1117/12.2051718
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KEYWORDS
Nanowires

Germanium

Raman spectroscopy

Finite element methods

Interfaces

Chemical species

Heterojunctions

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