Paper
28 March 2014 Demonstration of EDA flow for massively parallel e-beam lithography
P. Brandt, J. Belledent, C. Tranquillin, T. Figueiro, S. Meunier, S. Bayle, A. Fay, M. Milléquant, B. Icard, M. Wieland
Author Affiliations +
Abstract
Today’s soaring complexity in pushing the limits of 193nm immersion lithography drives the development of other technologies. One of these alternatives is mask-less massively parallel electron beam lithography, (MP-EBL), a promising candidate in which future resolution needs can be fulfilled at competitive cost. MAPPER Lithography’s MATRIX MP-EBL platform has currently entered an advanced stage of development. The first tool in this platform, the FLX 1200, will operate using more than 1,300 beams, each one writing a stripe 2.2μm wide. 0.2μm overlap from stripe to stripe is allocated for stitching. Each beam is composed of 49 individual sub-beams that can be blanked independently in order to write in a raster scan pixels onto the wafer.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. Brandt, J. Belledent, C. Tranquillin, T. Figueiro, S. Meunier, S. Bayle, A. Fay, M. Milléquant, B. Icard, and M. Wieland "Demonstration of EDA flow for massively parallel e-beam lithography", Proc. SPIE 9049, Alternative Lithographic Technologies VI, 904915 (28 March 2014); https://doi.org/10.1117/12.2046091
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Cited by 3 scholarly publications.
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KEYWORDS
Electron beam lithography

Nano opto mechanical systems

Raster graphics

Point spread functions

Electronic design automation

Critical dimension metrology

Semiconducting wafers

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