Improvement of sub-20nm pattern quality with dose modulation technique for NIL template production

Keisuke Yagawa; Kunihiro Ugajin; Machiko Suenaga; Shingo Kanamitsu; Takeharu Motokawa; Kazuki Hagihara; Yukiyasu Arisawa; Sachiko Kobayashi; Masato Saito; Masamitsu Ito

doi:10.1117/12.2218809

1 April 2016 Improvement of sub-20nm pattern quality with dose modulation technique for NIL template production

Keisuke Yagawa, Kunihiro Ugajin, Machiko Suenaga, Shingo Kanamitsu, Takeharu Motokawa, Kazuki Hagihara, Yukiyasu Arisawa, Sachiko Kobayashi, Masato Saito, Masamitsu Ito

Author Affiliations +

Proceedings Volume 9777, Alternative Lithographic Technologies VIII; 97771I (2016) https://doi.org/10.1117/12.2218809
Event: SPIE Advanced Lithography, 2016, San Jose, California, United States

Abstract

Nanoimprint lithography (NIL) technology is in the spotlight as a next-generation semiconductor manufacturing technique for integrated circuits at 22 nm and beyond. NIL is the unmagnified lithography technique using template which is replicated from master templates. On the other hand, master templates are currently fabricated by electron-beam (EB) lithography[1]. In near future, finer patterns less than 15nm will be required on master template and EB data volume increases exponentially. So, we confront with a difficult challenge. A higher resolution EB mask writer and a high performance fabrication process will be required. In our previous study, we investigated a potential of photomask fabrication process for finer patterning and achieved 15.5nm line and space (L/S) pattern on template by using VSB (Variable Shaped Beam) type EB mask writer and chemically amplified resist. In contrast, we found that a contrast loss by backscattering decreases the performance of finer patterning. For semiconductor devices manufacturing, we must fabricate complicated patterns which includes high and low density simultaneously except for consecutive L/S pattern. Then it’s quite important to develop a technique to make various size or coverage patterns all at once. In this study, a small feature pattern was experimentally formed on master template with dose modulation technique. This technique makes it possible to apply the appropriate exposure dose for each pattern size. As a result, we succeed to improve the performance of finer patterning in bright field area. These results show that the performance of current EB lithography process have a potential to fabricate NIL template.

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Keisuke Yagawa, Kunihiro Ugajin, Machiko Suenaga, Shingo Kanamitsu, Takeharu Motokawa, Kazuki Hagihara, Yukiyasu Arisawa, Sachiko Kobayashi, Masato Saito, and Masamitsu Ito "Improvement of sub-20nm pattern quality with dose modulation technique for NIL template production", Proc. SPIE 9777, Alternative Lithographic Technologies VIII, 97771I (1 April 2016); https://doi.org/10.1117/12.2218809

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KEYWORDS

Photomasks

Nanoimprint lithography

Backscatter

Lithography

Solids

Data conversion

Photoresist processing

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