Patterning of indium-tin-oxide (ITO) films using laser-induced forward transfer (LIFT) technique

Hironobu Sakata; Akira Yoshikado; Eisuke Yokoyama; Moriaki Wakaki

doi:10.1117/12.873058

24 March 2011 Patterning of indium-tin-oxide (ITO) films using laser-induced forward transfer (LIFT) technique

Hironobu Sakata, Akira Yoshikado, Eisuke Yokoyama, Moriaki Wakaki

Proceedings Volume 7940, Oxide-based Materials and Devices II; 794011 (2011) https://doi.org/10.1117/12.873058
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

The LIFT experiments were performed in air at room temperature for ITO films with the thickness of 180nm. A line pattern of the ITO film was obtained using a second harmonic generation SHG (532nm) beam of a Q-switched Nd:YAG laser (5.18W) with the repetition rate of 40kHz and the pulse width of 13ns. The beam was scanned using a galvano mirror optical setup system. Two kinds of sandwiched glass plate samples were used: (1) a glass plate deposited with ITO film (donor) is contact with another glass substrate (receiver) with no-gap, that is, the ITO film is in direct contact with a receiver glass, and (2) the donor is placed against the receiver glass with an 0.14mm air gap using a glass spacer. These samples were irradiated by the scanned beam with different scanning speeds. LIFT-transferred film pattern with the linear array of dot prints was obtained for the scanning speed of 200cm/s, but for the scanning speed of 10cm/s, the linear array of continuous printed tracks was produced. The edge of the printed track was clearer in (2) than (1) for the scanning speed of 10cm/s. As a result, the sample of type (2) with air-gap is preferable to obtain the line printed pattern with clear track edge, and the scanning speed should be smaller than 10 cm/s for this laser.

Citation Download Citation

Hironobu Sakata, Akira Yoshikado, Eisuke Yokoyama, and Moriaki Wakaki "Patterning of indium-tin-oxide (ITO) films using laser-induced forward transfer (LIFT) technique", Proc. SPIE 7940, Oxide-based Materials and Devices II, 794011 (24 March 2011); https://doi.org/10.1117/12.873058

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