Paper
1 July 2004 Polarization-insensitive MQW superluminescent emitting diodes
TongNing Li, Jingyi Wang, Yan Feng, Jinyan Jin, Weiming Zhu, Yibing Tang, Wenchao Xu, Tao Huang, David Eu
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Abstract
Polarization-insensitive high power MQW superluminescent emitting diodes (SLEDs) were fabricated at 1300 nm with a very wide bandwidth of more than 60 nm and a very low spectrum modulation of 0.1 dB by combining high quality AR coating and several proprietary technologies including tilted cavity, window region and absorption region. Polarization dependence as low as 0.2 dB and more than 12 mW output power were obtained at 250 mA. The devices were evaluated for optical coherence domain reflectometer (OCDR) applications, and the coherence function data was quite good with a coherence measurement out to 10 mm with negligible artifacts. Devices with different cavity lengths were also fabricated and analyzed.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
TongNing Li, Jingyi Wang, Yan Feng, Jinyan Jin, Weiming Zhu, Yibing Tang, Wenchao Xu, Tao Huang, and David Eu "Polarization-insensitive MQW superluminescent emitting diodes", Proc. SPIE 5316, Coherence Domain Optical Methods and Optical Coherence Tomography in Biomedicine VIII, (1 July 2004); https://doi.org/10.1117/12.528537
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Cited by 2 scholarly publications.
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KEYWORDS
Polarization

Quantum wells

Coherence (optics)

Silicon films

Waveguides

Semiconducting wafers

Antireflective coatings

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