Photoreflectance of GaAs/Ga1-xAlxAs heterojunction bipolar transistor structures

X. Yin; Fred H. Pollak; L. Pawlowicz; Thomas J. O'Neill; M. E. Hafizi

doi:10.1117/12.20870

1 August 1990 Photoreflectance of GaAs/Ga1-xAlxAs heterojunction bipolar transistor structures

X. Yin, Fred H. Pollak, L. Pawlowicz, Thomas J. O'Neill, M. E. Hafizi

Proceedings Volume 1286, Modulation Spectroscopy; (1990) https://doi.org/10.1117/12.20870
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

We have studied the photoreflectance spectra at 300 K from a number of GaAs/Ga1AlAs heterojunction bipolar transistor (HBT) structures grown by molecular beam epitaxy and metal-organic chemical vapor deposition. From the observed Franz-Keldysh oscillations we have been able to evaluate the built-in dc electric fields, F , in the Ga Al As emitter as well as the n GaAs collector region. In dc 1-x x addition, the Ga1AlAs band gap (and hence Al composition) has been determined. The obtained values of Fd are in good agreement with numerically-computed values for the analyzed HBT structures, thus making it possible to deduce doping levels in these structures. The GaAlAs FKO have been correlated with device performance.

Citation Download Citation

X. Yin, Fred H. Pollak, L. Pawlowicz, Thomas J. O'Neill, and M. E. Hafizi "Photoreflectance of GaAs/Ga1-xAlxAs heterojunction bipolar transistor structures", Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); https://doi.org/10.1117/12.20870

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